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首页 > 新闻中心 > 国产SiC碳化硅MOSFET功率器件可靠性及一致性如何确保?
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国产SiC碳化硅MOSFET功率器件可靠性及一致性如何确保?
发布时间:2024-02-01        浏览次数:847        返回列表
 国产SiC碳化硅MOSFET功率器件可靠性及一致性如何确保?!!!!!!! -00000000000000000002
电力电子系统研发制造商一般需要碳化硅MOSFET功率器件供应商提供可靠性测试报告的原始数据和器件封装的FT数据。
SiC碳化硅MOSFET可靠性报告原始数据主要来自以下可靠性测试环节的测试前后的数据对比,通过对齐可靠性报告原始数据测试前后漂移量的对比,从而反映器件的可靠性控制标准及真实的可靠性裕量。SiC碳化硅MOSFET可靠性报告原始数据主要包括以下数据:
SiC碳化硅MOSFET高温反偏 High Temperature Reverse Bias HTRB Tj=175℃ VDS=100%BV
SiC碳化硅MOSFET高温栅偏(正压) High Temperature Gate Bias(+) HTGB(+) Tj=175℃ VGS=22V
SiC碳化硅MOSFET高温栅偏(负压) High Temperature Gate Bias(-) HTGB(-) Tj=175℃ VGS=-8V
SiC碳化硅MOSFET高压高湿高温反偏 High Voltage, High Humidity, High Temp. Reverse Bias HV-H3TRB Ta=85℃ RH=85% VDS=80%BV
SiC碳化硅MOSFET高压蒸煮 Autoclave AC Ta=121℃ RH=100% 15psig
SiC碳化硅MOSFET温度循环 Temperature Cycling TC -55℃ to 150℃
SiC碳化硅MOSFET间歇工作寿命 Intermittent Operational Life IOL △Tj≥100℃ Ton=2min Toff=2min
FT数据来自碳化硅MOSFET功率器件FT测试(Final Test,也称为FT)是对已制造完成的碳化硅MOSFET功率器件进行结构及电气功能确认,以保证碳化硅MOSFET功率器件符合系统的需求。
通过分析碳化硅MOSFET功率器件FT数据的关键数据(比如V(BR)DSS,VGS(th),RDS(on),
IDSS)的正态分布,可以定性碳化硅MOSFET功率器件材料及制程的稳定性,这些数据的定性对电力电子系统设计及大批量制造的稳定性也非常关键。
 
基本™(BASiC Semiconductor)第二代SiC碳化硅MOSFET两大主要特色:
 
1.出类拔萃的可靠性:相对竞品较为充足的设计余量来确保大规模制造时的器件可靠性。
基本™(BASiC Semiconductor)第二代SiC碳化硅MOSFET 1200V系列击穿电压BV值实测在1700V左右,高于市面主流竞品,击穿电压BV设计余量可以抵御碳化硅衬底外延材料及晶圆流片制程的摆动,能够确保大批量制造时的器件可靠性,这是基本™(BASiC Semiconductor)第二代SiC碳化硅MOSFET布袋除尘器关键的品质. 基本™(BASiC Semiconductor)第二代SiC碳化硅MOSFET雪崩耐量裕量相对较高,也增强了在电力电子系统应用中的可靠性。
 
2.可圈可点的器件性能:同规格较小的Crss带来出色的开关性能。
基本™(BASiC Semiconductor)第二代SiC碳化硅MOSFET反向传输电容Crss 在市面主流竞品中是比较小的,带来关断损耗Eoff也是市面主流产品中非常出色的,优于部分海外竞品,特别适用于LLC应用.
 
Basic™ (BASiC Semiconductor) second generation SiC silicon carbide MOSFET has two main features:
1. Outstanding reliability: Compared with competing products, there is sufficient design margin to ensure device reliability during mass manufacturing.
The breakdown voltage BV value of BASiC Semiconductor's second-generation SiC silicon carbide MOSFET 1200V series is measured to be around 1700V, which is higher than mainstream competing products on the market. The breakdown voltage BV design margin can withstand silicon carbide substrate epitaxial materials and wafers. The swing of the tape-out process can ensure device reliability during mass manufacturing, which is the most critical quality of BASiC Semiconductor’s second-generation SiC silicon carbide MOSFET. BASiC Semiconductor’s second-generation SiC silicon carbide MOSFET The relatively high avalanche tolerance margin also enhances reliability in power electronic system applications.
2. Remarkable device performance: Smaller Crss with the same specifications brings excellent switching performance.
BASiC Semiconductor's second-generation SiC silicon carbide MOSFET reverse transmission capacitor Crss is relatively small among mainstream competing products on the market, and its turn-off loss Eoff is also very good among mainstream products on the market, better than some overseas competing products. , especially suitable for LLC applications, typical applications such as charging pile power module downstream DC-DC applications.
 
Ciss:输入电容(Ciss=Cgd+Cgs) ⇒栅极-漏极和栅极-源极电容之和:它影响延迟时间;Ciss越大,延迟时间越长。基本™(BASiC Semiconductor)第二代SiC碳化硅MOSFET 优于主流竞品。
Crss:反向传输电容(Crss=Cgd) ⇒栅极-漏极电容:Crss越小,漏极电流上升特性越好,这有利于MOSFET的损耗,在开关过程中对切换时间起决定作用,高速驱动需要低Crss。
Coss:输出电容(Coss=Cgd+Cds)⇒栅极-漏极和漏极-源极电容之和:它影响关断特性和轻载时的损耗。如果Coss较大,关断dv/dt减小,这有利于噪声。但轻载时的损耗增加。
 
倾佳电子(Changer Tech)致力于国产碳化硅(SiC)MOSFET功率器件在电力电子市场的推广!Changer Tech-Authorized Distributor of BASiC Semiconductor which committed to the promotion of BASiC™ silicon carbide (SiC) MOSFET power devices in the power electronics market!
 
 
基本™B2M第二代碳化硅MOSFET器件主要特色:
• 比导通电阻降低40%左右
• Qg降低了60%左右
• 开关损耗降低了约30%
• 降低Coss参数,更适合软开关
• 降低Crss,及提高Ciss/Crss比值,降低器件在串扰行为下误导通风险
• 最大工作结温175℃• HTRB、 HTGB+、 HTGB-可靠性按结温Tj=175℃通过测试
• 优化栅氧工艺,提高可靠性
• 高可靠性钝化工艺
• 优化终端环设计,降低高温漏电流
• AEC-Q101